Update:2025.04.23
Mn oxides are attractive electronic materials because they exhibit various functionalities such as giant magnetoresistance. Through the present study, it has been verified that the local crystal structure around Mn ions in Mn3O4 can be experimentally manipulated by applying shear strain under compression.
By comparing the shear effects with simple compression effects, the improvement of magnetic functionality due to the shear effects was observed. It has been demonstrated that shear field with compression is valid for the manipulation. of electronic property in Mn oxides.
This novelty was evaluated by AIP publishing, so that our paper was selected as ”Featured Article” paper of J. Appl. Phys.
Name | Mr.Alexy Mathieu BERTRAND (Materials Science and Engineering Course, Doctoral Program, Graduate School of Engineering) |
Paper Title | Effects of severe shear strain and hydrostatic compression on the magnetism and crystal structure of manganese oxide Mn3O4 |
Supervisor | Professor. Dr.Masaki MITO (Department of Basic Sciences, Graduate School of Engineering) |